VISHAY · FETs & Power MOSFETs · MPN IRFD214PBF
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 250V |
| Gate Charge(Qg) | 8.2nC@10V |
| Current - Continuous Drain(Id) | 450mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.6pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
250V 450mA 2V 1W 2Ω@10V 1 N-channel HVMDIP-4 Single FETs, MOSFETs RoHS