VISHAY IRFD120PBF

VISHAY · FETs & Power MOSFETs · MPN IRFD120PBF

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Specifications

Gate Charge(Qg)16nC@10V
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)360pF

Technical details

N-Channel 100V 1.3A 1.3W Through Hole HVMDIP-4

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