VISHAY IRFD024PBF

VISHAY · FETs & Power MOSFETs · MPN IRFD024PBF

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Specifications

Configuration-
Gate Charge(Qg)25nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)79pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)640pF

Technical details

N-Channel 60V 1.3W Through Hole HVMDIP-4

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