VISHAY IRFBG30PBF

VISHAY · FETs & Power MOSFETs · MPN IRFBG30PBF

No reviews yet — be the first to review VISHAY IRFBG30PBF.

Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)980pF
TypeN-Channel

Technical details

N-Channel 1kV 3.1A 125W Through Hole TO-220

Related FETs & Power MOSFETs