VISHAY IRFBG20PBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRFBG20PBF-BE3

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)11Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

1kV 1.4A 4V 54W 11Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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