VISHAY IRFBG20PBF

VISHAY · FETs & Power MOSFETs · MPN IRFBG20PBF

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)860mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)11Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 1kV 0.86A 54W Through Hole TO-220AB

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