VISHAY IRFBF30PBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRFBF30PBF-BE3

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)78nC@10V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)3.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

900V 3.6A 4V 1.5W 3.7Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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