VISHAY IRFBF30PBF

VISHAY · FETs & Power MOSFETs · MPN IRFBF30PBF

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Specifications

Gate Charge(Qg)78nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)3.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

N-Channel 900V 2.3A 125W Through Hole TO-220AB

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