VISHAY · FETs & Power MOSFETs · MPN IRFBF20STRRPBF
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W;54W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 490pF |
900V 1.1A 4V 8Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS