VISHAY IRFBE30SPBF

VISHAY · FETs & Power MOSFETs · MPN IRFBE30SPBF

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Specifications

Gate Charge(Qg)78nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 800V 4.1A 125W Surface Mount D2PAK(TO-263)

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