VISHAY · FETs & Power MOSFETs · MPN IRFBE30LPBF
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
800V 4.1A 4V 125W 3Ω@10V 1 N-channel I2PAK Single FETs, MOSFETs RoHS