VISHAY IRFBE20PBF

VISHAY · FETs & Power MOSFETs · MPN IRFBE20PBF

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Specifications

Gate Charge(Qg)38nC
Drain to Source Voltage800V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)6.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)530pF
TypeN-Channel

Technical details

P-Channel 800V 1.8A 54W Through Hole TO-220AB

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