VISHAY IRFBC30APBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRFBC30APBF-BE3

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
TypeN-Channel

Technical details

600V 2.3A 4.5V 74W 2.2Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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