VISHAY · FETs & Power MOSFETs · MPN IRFBC20SPBF
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W;50W |
| RDS(on) | 4.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
600V 2.2A 4V 4.4Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS