VISHAY IRFBC20PBF

VISHAY · FETs & Power MOSFETs · MPN IRFBC20PBF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)4.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

600V 2.2A 4V 50W 4.4Ω@10V 1 N-channel N-Channel TO-220AB-3 Single FETs, MOSFETs RoHS

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