VISHAY IRFB18N50KPBF

VISHAY · FETs & Power MOSFETs · MPN IRFB18N50KPBF

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)120nC@10V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.83nF
TypeN-Channel

Technical details

N-Channel 500V 17A 220W Through Hole TO-220

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