VISHAY IRFB11N50APBF

VISHAY · FETs & Power MOSFETs · MPN IRFB11N50APBF

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)208pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)8.1pF
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.423nF
TypeN-Channel

Technical details

N-Channel 500V 11A 170W Through Hole TO-220AB

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