VISHAY IRF9Z34STRRPBF

VISHAY · FETs & Power MOSFETs · MPN IRF9Z34STRRPBF

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.7W;88W
RDS(on)140mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.1nF

Technical details

60V 18A 140mΩ@10V 1 P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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