VISHAY IRF9Z30PBF

VISHAY · FETs & Power MOSFETs · MPN IRF9Z30PBF

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)140mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

50V 18A 4V 74W 140mΩ@10V 1 P-Channel P-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS

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