VISHAY · FETs & Power MOSFETs · MPN IRF9610STRRPBF
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W;20W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 170pF |
200V 4V 3Ω@10V 1 P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS