VISHAY IRF9610PBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRF9610PBF-BE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)3Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)170pF
TypeP-Channel

Technical details

200V 1.8A 4V 20W 3Ω@10V 1 P-Channel P-Channel TO-220-3 Single FETs, MOSFETs RoHS

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