VISHAY IRF9510STRLPBF

VISHAY · FETs & Power MOSFETs · MPN IRF9510STRLPBF

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Specifications

Gate Charge(Qg)8.7nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.7W;43W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)1.2Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)200pF

Technical details

100V 2.8A 2V 1.2Ω@10V 1 P-Channel D2PAK Single FETs, MOSFETs RoHS

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