VISHAY IRF9510PBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRF9510PBF-BE3

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)8.7nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation43W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)1.2Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)200pF
TypeP-Channel

Technical details

100V 4A 4V 43W 1.2Ω@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs RoHS

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