VISHAY IRF840STRRPBF

VISHAY · FETs & Power MOSFETs · MPN IRF840STRRPBF

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

500V 8A 4V 125W 850mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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