VISHAY IRF830BPBF

VISHAY · FETs & Power MOSFETs · MPN IRF830BPBF

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)325pF
TypeN-Channel

Technical details

500V 5.3A 5V 104W 1.5Ω@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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