VISHAY IRF820APBF

VISHAY · FETs & Power MOSFETs · MPN IRF820APBF

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)2.7pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)340pF
TypeN-Channel

Technical details

N-Channel 500V 2.5A 50W Through Hole TO-220AB

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