VISHAY IRF644STRRPBF

VISHAY · FETs & Power MOSFETs · MPN IRF644STRRPBF

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

250V 14A 4V 125W 280mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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