VISHAY · FETs & Power MOSFETs · MPN IRF640STRRPBF
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W;130W |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
N-Channel 200V 18A 3.1W 130W Surface Mount TO-263(D2PAK)