VISHAY IRF640STRLPBF

VISHAY · FETs & Power MOSFETs · MPN IRF640STRLPBF

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.1W;130W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 200V 18A 3.1W 130W Surface Mount TO-263(D2PAK)

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