VISHAY IRF634STRRPBF

VISHAY · FETs & Power MOSFETs · MPN IRF634STRRPBF

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W;74W
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

250V 5.1A 2V 450mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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