VISHAY · FETs & Power MOSFETs · MPN IRF620STRRPBF
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W;50W |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 260pF |
200V 5.2A 4V 800mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS