VISHAY IRF614STRRPBF

VISHAY · FETs & Power MOSFETs · MPN IRF614STRRPBF

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)8.2nC@10V
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF
TypeN-Channel

Technical details

250V 2.7A 4V 36W 2Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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