VISHAY IRF614SPBF

VISHAY · FETs & Power MOSFETs · MPN IRF614SPBF

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)8.2nC@10V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W;36W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

250V 1.7A 2V 2Ω@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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