VISHAY IRF614PBF

VISHAY · FETs & Power MOSFETs · MPN IRF614PBF

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Specifications

Gate Charge(Qg)8.2nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

250V 1.7A 4V 36W 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS

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