VISHAY IRF610STRLPBF

VISHAY · FETs & Power MOSFETs · MPN IRF610STRLPBF

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Specifications

Gate Charge(Qg)8.2nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

200V 2.1A 2V 36W 1.5Ω@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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