VISHAY IRF610SPBF

VISHAY · FETs & Power MOSFETs · MPN IRF610SPBF

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)8.2nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF
TypeN-Channel

Technical details

N-Channel 200V 3.3A 36W Surface Mount D2PAK(TO-263)

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