VISHAY IRF610LPBF

VISHAY · FETs & Power MOSFETs · MPN IRF610LPBF

No reviews yet — be the first to review VISHAY IRF610LPBF.

Specifications

Configuration-
Drain to Source Voltage200V
Gate Charge(Qg)8.2nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

200V 3.3A 4V 36W 1.5Ω@10V 1 N-channel N-Channel I2PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs