VISHAY IRF530PBF

VISHAY · FETs & Power MOSFETs · MPN IRF530PBF

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Specifications

Configuration-
Gate Charge(Qg)26nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF

Technical details

N-Channel 100V 14A 88W Through Hole ITO-220AB-3

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