VISHAY · FETs & Power MOSFETs · MPN IRF510STRRPBF
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| Gate Charge(Qg) | 8.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.7W;43W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 540mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
100V 4A 2V 540mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS