VISHAY IRF510PBF

VISHAY · FETs & Power MOSFETs · MPN IRF510PBF

No reviews yet — be the first to review VISHAY IRF510PBF.

Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)81pF
Current - Continuous Drain(Id)5.6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation43W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 100V 5.6A 43W Through Hole TO-220AB

Related FETs & Power MOSFETs