VISHAY 2N7002E-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN 2N7002E-T1-GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)600pC@10V
Current - Continuous Drain(Id)240mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 60V 240mA 0.35W Surface Mount SOT-23

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