VBsemi Elec ZXMN4A06GTA-VB

VBsemi Elec · FETs & Power MOSFETs · MPN ZXMN4A06GTA-VB

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)28mΩ@10V;33mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 60V 7A 1.7W Surface Mount SOT-223

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