VBsemi Elec · FETs & Power MOSFETs · MPN ZXMN3A04DN8TA-VB
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| Output Capacitance(Coss) | 140pF |
|---|---|
| Pd - Power Dissipation | 3.1W |
| Configuration | - |
| Gate Charge(Qg) | 7.1nC |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 16mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 660pF |
3.1W 30V 1.2V 16mΩ@10V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS