VBsemi Elec · FETs & Power MOSFETs · MPN ZXMC6A09DN8TC-VB
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| Gate Charge(Qg) | 6nC;8nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 5.3A;4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 26mΩ@10V;55mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 665pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 60V 5.3A 4.9A 2W Surface Mount SO-8