VBsemi Elec ZXMC6A09DN8TA-VB

VBsemi Elec · FETs & Power MOSFETs · MPN ZXMC6A09DN8TA-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)20nC@10V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.4W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)29mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)665pF
TypeN-Channel + P-Channel

Technical details

60V 5.3A 3V 3.4W 29mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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