VBsemi Elec · FETs & Power MOSFETs · MPN ZVN4525E6TA-VB
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| Gate Charge(Qg) | 6.2nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 200mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
200V 4A 2.5V 5W 200mΩ@4.5V 1 N-channel N-Channel TSOP-6 Single FETs, MOSFETs RoHS