VBsemi Elec · FETs & Power MOSFETs · MPN WSP06N10-VB
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| Gate Charge(Qg) | 4.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.8W |
| RDS(on) | 128mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 470pF |
| Type | N-Channel |
N-Channel 100V 4.2A 4.8W Surface Mount SO-8