VBsemi Elec W341-VB

VBsemi Elec · FETs & Power MOSFETs · MPN W341-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.2nC@10V;18.5nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)95pF;115pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)33pF;57pF
RDS(on)18mΩ@10V;40mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF;620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 8A 3.1W Surface Mount SO-8

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