VBsemi Elec VBZQF50N03

VBsemi Elec · FETs & Power MOSFETs · MPN VBZQF50N03

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)236pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

N-Channel 30V 50A 60W Surface Mount DFN3x3-8

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