VBsemi Elec · FETs & Power MOSFETs · MPN VBZM80N04
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
N-Channel 40V 110A 3.13W Through Hole TO-220AB